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| Power Transistors 2SB1638, 2SB1638A Silicon PNP epitaxial planar type Unit: mm For low-voltage switching 7.00.3 3.00.2 3.50.2 s Features q q q Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25C) Ratings -40 -50 -20 -40 -5 -12 -7 15 1.3 150 -55 to +150 Unit V 7.20.3 0.80.2 1.10.1 1.00.2 10.0 -0. +0.3 0.850.1 0.40.1 0.750.1 2.30.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB1638 2SB1638A 2SB1638 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 4.60.4 1 2 3 1:Base 2:Collector 3:Emitter I Type Package 3.50.2 2.00.2 7.00.3 Unit: mm 0 to 0.15 emitter voltage 2SB1638A Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature V 10.20.3 7.20.3 V A A 3.00.2 1.0 max. 2.5 0.750.1 0.5 max. 0.90.1 0 to 0.15 W C C 1.10.1 1 2 3 2.30.2 4.60.4 s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB1638 2SB1638A 2SB1638 2SB1638A 1:Base 2:Collector 3:Emitter I Type Package (Y) (TC=25C) Symbol ICBO IEBO VCEO hFE1 hFE2 * Conditions VCB = -40V, IE = 0 VCB = -50V, IE = 0 VEB = -5V, IC = 0 IC = -10mA, IB = 0 VCE = -2V, IC = - 0.1A VCE = -2V, IC = -2A IC = -5A, IB = - 0.16A IC = -5A, IB = - 0.16A VCE = -10V, IC = - 0.5A, f = 10MHz VCB = -10V, IE = 0, f = 1MHz IC = -2A, IB1 = -66mA, IB2 = 66mA min typ max -50 -50 -50 Unit A A V -20 -40 45 90 260 - 0.6 -1.5 150 140 0.1 0.5 0.1 Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Storage time Fall time *h FE2 VCE(sat) VBE(sat) fT Cob ton tstg tf V V MHz pF s s s Rank classification Q 90 to 180 P 130 to 260 Rank hFE2 2.50.2 1.0 2.50.2 1.0 1 Power Transistors PC -- Ta 20 -6 (1) TC=Ta (2) Without heat sink (PC=1.3W) 15 IB=-60mA -5 TC=25C -50mA -45mA -40mA -35mA -30mA -3 -25mA -20mA -2 -15mA -10mA -1 (2) 0 0 20 40 60 80 100 120 140 160 0 0 -1 -2 -3 -4 -5 -6 -5mA 2SB1638, 2SB1638A IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) -10 VCE(sat) -- IC IC/IB=30 TC=100C 25C -1 -25C Collector power dissipation PC (W) -3 Collector current IC (A) -4 10 (1) - 0.3 - 0.1 5 - 0.03 - 0.01 - 0.1 - 0.3 -1 -3 -10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC -10 hFE -- IC IC/IB=30 10000 VCE=-2V 10000 3000 1000 300 100 30 10 3 fT -- IC VCE=-10V f=10MHz TC=25C Base to emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE -3 1000 300 100 30 10 3 1 - 0.1 - 0.3 TC=100C 25C -1 TC=-25C 100C 25C - 0.3 -25C - 0.1 - 0.03 - 0.01 - 0.1 Transition frequency fT (MHz) -10 -30 -100 3000 - 0.3 -1 -3 -10 -1 -3 1 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob -- VCB 10000 -10 IE=0 f=1MHz TC=25C ton, tstg, tf -- IC Pulsed tw=1ms Duty cycle=1% IC/IB=30 (-IB1=IB2) VCC=-20V TC=25C Area of safe operation (ASO) -100 -30 Non repetitive pulse TC=25C ICP -10 IC -3 -1 300ms 10ms t=1ms Collector output capacitance Cob (pF) 3000 Switching time ton,tstg,tf (s) -3 1000 300 100 30 10 3 1 - 0.1 - 0.3 -1 tstg ton tf - 0.3 - 0.1 Collector current IC (A) - 0.3 - 0.1 - 0.03 - 0.03 - 0.01 -1 -3 -10 -30 -100 0 -1 -2 -3 -4 -5 -6 -7 -8 - 0.01 -1 -3 -10 -30 Collector to base voltage VCB (V) Collector current IC (A) Collector to emitter voltage VCE (V) 2 2SB1638A -100 -300 -1000 2SB1638 Power Transistors Rth(t) -- t 103 (1) Without heat sink (2) With a 50 x 50 x 2mm Al heat sink 2SB1638, 2SB1638A Thermal resistance Rth(t) (C/W) 102 (1) (2) 10 1 10-1 10-3 10-2 10-1 1 10 102 103 104 Time t (s) 3 |
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